STRH12P10ESY3

Electrical characteristics

5/12

2.2

Post-irradiation

The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The

technology is extremely resistant to assurance well functioning of the device inside the

radiation environments. Every manufacturing lot is tested for total ionizing dose.

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

12

48

A

A

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

1.1

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

248

2.3

19

ns

µC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

300

3

22

ns

µC

A

a.

According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.

Table 8.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Zero gate voltage drain

10

µA

Gate body leakage current

±

100

nA

Drain-source breakdown

voltage

100

V

Gate threshold voltage

24.5

V

Static drain-source on

resistance

0.265

0.3

Ω