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LM6162J/883 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM6162J/883
Description  High Speed Operational Amplifier
PDF  12 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM6162J/883 Datasheet(HTML) 3 Page - National Semiconductor (TI)

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DC Electrical Characteristics (Continued)
These limits apply for supply voltage
g
15V VCM
0V and RL t 100 kX unless otherwise specified Limits in standard
typeface are for TA
TJ
25 C limits in boldface type apply over the Operating Temperature Range
(Note 7)
Typical
LM6162
LM6262
LM6362
Symbol
Parameter
Conditions
Limit
Limit
Limit
Units
(Note 8)
(Note 8)
(Note 8)
VO
Output Voltage Swing
Supply
a
5V and
42
35
35
34
V
RL
2kX (Note 10)
33
33
33
min
13
17
17
18
V
20
19
19
max
IOSC
Output Short
Sourcing
65
30
30
30
mA
Circuit Current
20
25
25
min
Sinking
65
30
30
30
mA
20
25
25
min
IS
Supply Current
50
65
65
68
mA
68
67
69
max
AC Electrical Characteristics
These limits apply for supply voltage
g
15V VCM
0V RL t 100 kX and CL s 5 pF unless otherwise specified Limits in
standard typeface are for TA
TJ
25 C limits in boldface type apply over the Operating Temperature Range
(Note 7)
Typical
LM6162
LM6262
LM6362
Symbol
Parameter
Conditions
Limit
Limit
Limit
Units
(Note 8)
(Note 8)
(Note 8)
GBW
Gain-Bandwidth Product
f
20 MHz
100
80
80
75
MHz
55
65
65
min
Supply
g
5V
70
MHz
SR
Slew Rate
AV
a
2 (Note 11)
300
200
200
200
V ms
180
180
180
min
Supply
g
5V
200
V ms
PBW
Power Bandwidth
VOUT
20 VPP
45
MHz
ts
Settling Time
10V step to 01%
100
ns
AV
b
1 RL
2kX
wm
Phase Margin
AV
a
2
45
deg
Differential Gain
NTSC AV
a
2
k
01
%
Differential Phase
NTSC AV
a
2
k
01
deg
en
Input Noise Voltage
f
10 kHz
10
nV SHz
in
Input Noise Current
f
10 kHz
12
pA SHz
Note 1
Absolute maximum ratings indicate limits beyond which damage to the component may occur Electrical specifications do not apply when operating the
device beyond its rated operating conditions
Note 2
The ESD protection circuitry between the inputs will begin to conduct when the differential input voltage reaches 8V
Note 3 a)
In addition the voltage between the Va pin and either input pin must not exceed 36V
b) When the voltage applied to an input pin is driven more than 03V below the negative supply pin voltage a substrate diode begins to conduct Current
through this pin must then be kept less than 20 mA to limit damage from self-heating
Note 4
Although the output current is internally limited continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum
allowed junction temperature of 150 C
Note 5
This value is the average voltage that the weakest pin combinations can withstand and still conform to the datasheet limits The test circuit used consists of
the human body model 100 pF in series with 1500X
Note 6
The typical thermal resistance junction-to-ambient of the molded plastic DIP (N package) is 105 CW For the molded plastic SO (M package) use
155 CW All numbers apply for packages soldered directly into a printed circuit board
Note 7
Typical values are for TJ
25 C and represent the most likely parametric norm
Note 8
Limits are guaranteed by testing or correlation
Note 9
Voltage Gain is the total output swing (20V) divided by the magnitude of the input signal required to produce that swing
Note 10
For single-supply operation the following conditions apply Va
5V V
0V VCM
25V VOUT
25V Pin 1 and Pin 8 (VOS Adjust pins) are each
connected to pin 4 (V ) to realize maximum output swing This connection will increase the offset voltage
Note 11
VIN
10V step For g5V supplies VIN
1V step
Note 12
A military RETS electrical test specification is available on request
3



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