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M28W320BT Datasheet(PDF) 34 Page - STMicroelectronics |
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M28W320BT Datasheet(HTML) 34 Page - STMicroelectronics |
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34 / 43 page ![]() M28W320BT, M28W320BB 34/43 Table 25. CFI Query System Interface Information Offset Data Description Value 1Bh 0027h VDD Logic Supply Minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 2.7V 1Ch 0036h VDD Logic Supply Maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 3.6V 1Dh 00B4h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 11.4V 1Eh 00C6h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 12.6V 1Fh 0004h Typical timeout per single word program = 2n µs 16µs 20h 0004h Typical timeout for Double Word Program = 2n µs 16µs 21h 000Ah Typical timeout per individual block erase = 2n ms 1s 22h 0000h Typical timeout for full chip erase = 2n ms NA 23h 0005h Maximum timeout for word program = 2n times typical 512µs 24h 0005h Maximum timeout for Double Word Program = 2n times typical 512µs 25h 0003h Maximum timeout per individual block erase = 2n times typical 8s 26h 0000h Maximum timeout for chip erase = 2n times typical NA |
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