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2SC5914 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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2SC5914 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 3 page ![]() 2SC5914 2 SJD00310BED PC Ta IC VCE IC VBE VCE(sat) IC hFE IC tf IB1(END) tstg IB1(END) Area of safe operation Area of safe operation (Horizontal operation) 80 60 40 20 0 0 50 100 150 Ambient temperature T a (°C) (1) (3) (2) (1) TC = T a (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink 0 2 4 6 8 10 02 4 68 10 IB = 2.0 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A 0.4 A 0.2 A 0 A 1.8 A Collector-emitter voltage V CE (V) 0 4 8 12 0 0.4 0.8 1.2 VCE = 5 V Ta = 120°C −40°C 25 °C Base-emitter voltage V BE (V) 10 2 10 1 1 10 10 1 110 IC / IB = 4 Ta = 120°C −40°C 25 °C Collector current I C (A) 10 1 1 10 102 10 1 110 Ta = 120°C −40°C 25 °C VCE = 5 V Collector current I C (A) Base current I B1(END) (A) 0 200 400 600 800 1 000 0.4 0.8 1.2 1.6 2.0 IC = 6.3 A L load 0 0.4 0.8 1.2 1.6 2.0 0.4 0.8 1.2 1.6 2.0 IC = 6.3 A L load Base current I B1(END) (A) Collector-emitter voltage V CE (V) 10 1 10 2 10 3 10 1 102 110 102 103 ICP IC DC t = 100 µs 1 ms 10 ms Non repetitive pulse TC = 25°C VCEO max. 30 25 20 15 10 5 0 01 000 500 1 500 2 000 Collector-emitter voltage V CE (V) < 1 mA fH = 64 kHz, T C < 90°C ASO for a single pulse load caused by EHT flashover during horizontal operation. |
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