ESDR0502B datasheet(2/4 Pages) ONSEMI

2 / 4 page

ESDR0502B, SZESDR0502B

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

Ppk

Peak Power Dissipation

Capacitance @ VR = 0 and f = 1.0 MHz

Uni−Directional TVS

IPP

VRWM

VC VBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)

Device*

Device

Marking

VRWM

(V)

IR (mA)

@ VRWM

VBR (V)

@ IT

(Note 2)

C (pF),

uni−directional

(Note 3)

C (pF),

bi−directional

(Note 4)

VC (V)

@ IPP = 1 A

(Note 5)

Max

Min

Typ

Max

Typ

Max

Per

IEC61000−

4−2

(Note 6)

ESDR0502B

5.0

1.0

5.8

1.0

0.5

0.9

0.25

0.45

Figures 1

and 2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

*Include SZ−prefix devices where applicable.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

3. Uni−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 3; pin 2 to pin 3).

4. Bi−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 2).

5. Surge current waveform per Figure 5.

6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV contact per IEC 61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV contact per IEC 61000−4−2

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