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IRF7311 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7311 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 5/29/01 SO -8 VDSS = 20V RDS(on) = 0.029Ω IRF7311 Description Symbol Maximum Units Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 TA = 25°C 6.6 TA = 70°C 5.3 Pulsed Drain Current IDM 26 Continuous Source Current (Diode Conduction) IS 2.5 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy EAS 100 mJ Avalanche Current IAR 4.1 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt 5.0 V/ ns Junction and Storage Temperature Range TJ,TSTG -55 to + 150 °C Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Continuous Drain Current Maximum Power Dissipation A ID PD V W D1 D1 D2 D2 G1 S2 G2 S1 T op V iew 8 1 2 3 4 5 6 7 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated PD - 91435C |
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