IRFZ44L datasheet(2/10 Pages) IRF

2 / 10 page

IRFZ44S/L

VDD = 25V, starting TJ = 25°C, L = 44µH

RG = 25Ω, IAS = 51A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

ISD ≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Uses IRFZ44 data and test conditions

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

2.5

TJ = 25°C, IS = 51A, VGS = 0V

trr

Reverse Recovery Time

–––

120

180

TJ = 25°C, IF = 51A

Qrr

Reverse Recovery Charge

–––

530

800

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.06

–––

V/°C

Reference to 25°C, ID =1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

––– 0.028

Ω

VGS =10V, ID = 31A

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

–––

VDS = 25V, ID = 31A

–––

µA

VDS = 60V, VGS = 0V

–––

250

VDS = 48V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Total Gate Charge

–––

ID = 51A

Qgs

Gate-to-Source Charge

–––

VDS = 48V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 10V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

VDD = 30V

Rise Time

–––

110

–––

ID = 51A

td(off)

Turn-Off Delay Time

–––

RG = 9.1

Ω

Fall Time

–––

RD = 0.55Ω, See Fig. 10

Between lead,

–––

and center of die contact

Ciss

Input Capacitance

–––

1900 –––

VGS = 0V

Coss

Output Capacitance

–––

920

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

170

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS

Drain-to-Source Leakage Current

7.5

Internal Source Inductance

200

Calculated continuous current based on maximum allowable

junction temperature; for recommended current-handling of the

package refer to Design Tip # 93-4

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