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N-Channel Enhancement Mode

High dv/dt, Low t

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

V

DGR

T

J

= 25

°C to 150°C; R

800

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

14N80

14

A

15N80

15

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

14N80

56

A

15N80

60

A

I

AR

T

C

= 25

°C

14N80

14

A

15N80

15

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

6g

Features

•

International standard packages

•

Low R

•

Rugged polysilicon gate cell structure

•

Unclamped Inductive Switching (UIS)

rated

•

Low package inductance

- easy to drive and to protect

•

Fast intrinsic Rectifier

Applications

•

DC-DC converters

•

Synchronous rectification

•

Battery chargers

•

Switched-mode and resonant-mode

power supplies

•

DC choppers

•

AC motor control

•

Temperature and lighting controls

•

Low voltage relays

Advantages

•

Easy to mount with 1 screw

(isolated mounting screw hole)

•

Space savings

•

High power density

TO-247 AD

Preliminary data

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

96523B (3/98)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

DSS

V

800

V

V

0.096

%/K

V

GS(th)

V

DS

= V

2.0

4.5

V

V

-0.214

%/K

I

GSS

V

±100

nA

I

DSS

V

DS

= 0.8 V

DSS

T

25

°C

250

mA

V

T

mA

R

DS(on)

V

14N80

0.70

W

15N80

0.60

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

V

DSS

I

D25

R

DS(on)

800 V

14 A

0.70

W

800 V

15 A

0.60

W

t

IXFH14N80

IXFH15N80

IXYS reserves the right to change limits, test conditions, and dimensions.