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TS884IDT Datasheet(PDF) 6 Page - STMicroelectronics

Part # TS884IDT
Description  Rail-to-rail 1.1 V dual and quad nanopower comparators
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TS884IDT Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
TS882, TS884
6/26
DocID024119 Rev 3
TF
Fall time (90% to 10%)
CL = 30 pF, RL = 1 MΩ
110
ns
TON
Power-up time
1.1
1.7
ms
1.
All values over the temperature range are guaranteed through correlation and simulation. No production test is performed
at the temperature range limits.
2.
The offset is defined as the average value of positive and negative trip points (input voltage differences requested to
change the output state in each direction).
3.
The hysteresis is a built-in feature of the TS882 device. It is defined as the voltage difference between the trip points.
4.
Maximum values include unavoidable inaccuracies of the industrial tests.
Table 4. VCC = +1.2 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified)
(1) (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit



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