Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Apr. 2017. Rev. 5.0

1/7

SW051R08ES

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-263

TO-220

V

DSS

Drain to source voltage

80

V

I

D

Continuous drain current (@T

120*

A

Continuous drain current (@T

85*

A

I

DM

Drain current pulsed

(note 1)

480

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

490

mJ

E

AR

Repetitive avalanche energy

(note 1)

25

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

192.3

215.5

W

1.53

1.72

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-263

TO-220

R

thjc

Thermal resistance, Junction to case

0.65

0.58

R

thja

Thermal resistance, Junction to ambient

50

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW B 051R08ES

SW051R08ES

TO-263

TUBE

2

SW P 051R08ES

SW051R08ES

TO-220

TUBE

N-channel Enhanced mode TO-263/TO-220/TO-220F MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 44nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 120A

R

1

2

3

1

2

3

TO-263

1

2

3

TO-220