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Oct. 2015. Rev. 2.0

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SW1N90U

N-channel Enhancement mode TO-251 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

900

V

1*

A

0.63*

A

Drain current pulsed

(note 1)

4

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

80

mJ

Repetitive Avalanche Energy

(note 1)

14

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

83

W

0.7

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

1.5

Thermal resistance, Case to Sink

0.5

Thermal resistance, Junction to ambient

98

*. Drain current is limited by junction temperature.

BV

I

D

: 1A

R

Ω

1. Gate 2. Drain 3. Source

1

2

3

2 3

TO-251

Item

Sales Type

Marking

Package

Packaging

1

SW I 1N90U

SW1N90U

TO-251

TUBE

Order Codes

Features

 High ruggedness

 R

 Gate Charge (Typ 7nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED,Charger

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

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