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Oct. 2015. Rev. 4.0

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N-channel Enhancement mode TO-220F/TO-251/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F

TO-251

TO-252

Drain to Source Voltage

700

V

4*

A

2.5*

A

Drain current pulsed

(note 1)

16

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

50

mJ

Repetitive Avalanche Energy

(note 1)

8

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

19.5

82.4

83.3

W

0.16

0.66

0.66

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-251

TO-252

Thermal resistance, Junction to case

6.4

1.5

1.5

Thermal resistance, Case to Sink

0.5

0.5

Thermal resistance, Junction to ambient

50

81

82

*. Drain current is limited by junction temperature.

BV

I

D

: 4A

R

1

2 3

1. Gate 2. Drain 3. Source

TO-251

SW4N70K

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 4N70K

SW4N70K

TO-220F

TUBE

2

SW I 4N70K

SW4N70K

TO-251

TUBE

3

SW D 4N70K

SW4N70K

TO-252

REEL

TO-220F

TO-252

1 2

3

1 2

3

Features

 High ruggedness

 R

 Gate Charge (Typ 13nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Adapter,LED,Charger

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.