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Sep. 2016. Rev. 4.0

1/6

N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-252

TO-251N

R

thjc

Thermal resistance, Junction to case

5.20

0.61

0.52

R

thja

Thermal resistance, Junction to ambient

47.8

87.1

BV

I

D

: 6A

R

1

2

3

SW6N60D

Item

Sales Type

Marking

Package

Packaging

1

SW F 6N60D

SW6N60D

TO-220F

TUBE

2

SW D 6N60D

SW6N60D

TO-252

REEL

3

SW N 6N60D

SW6N60D

TO-251N

TUBE

Order Codes

Symbol

Parameter

Value

Unit

TO-220F

TO-252

TO-251N

V

DSS

Drain to source voltage

600

V

I

D

Continuous drain current (@T

6*

A

Continuous drain current (@T

3.8*

A

I

DM

Drain current pulsed

(note 1)

24

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

215

mJ

E

AR

Repetitive avalanche energy

(note 1)

30

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

24

205

240

W

0.19

1.64

1.92

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

1

2

3

TO-220F

TO-252

1 2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 23nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: UPS,Inverter,TV-POWER

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-251N

1 2

3