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Jan. 2017. Rev. 2.0

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SW20N20D

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

200

V

I

D

Continuous drain current (@T

20*

A

Continuous drain current (@T

13*

A

I

DM

Drain current pulsed

(note 1)

80

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

234

mJ

E

AR

Repetitive avalanche energy

(note 1)

17

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

166.7

W

1.3

T

Operating junction temperature & storage temperature

-55 ~ + 150

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.75

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 20N20D

SW20N20D

TO-252

REEL

N-channel Enhanced mode TO-252 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 37nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED,DC-DC

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 20A

R

1

2

3

TO-252

1

2

3