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ACE1358B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1358B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE1358B N-Channel Enhancement Mode Field Effect Transistor VER 1.1 1 Description The ACE1358B uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 2.5V. -RoHS Compliant -Halogen Free Features VDS (V) = 20V,ID = 2A RDS(ON)<50mΩ @ VGS= 4.5V RDS(ON)<80mΩ @ VGS= 2.5V TSOT-23-3 Package Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25℃ ID 2 A TA=70℃ 1.5 Drain Current (Pulsed) IDM 8 A Power Dissipation TA=25℃ PD 0.8 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 Ordering information ACE1358B XXX + H BMS: TSOT-23-3 Pb - free Halogen - free |
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