Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

SW6N65K

Jan. 2017. Rev. 3.0

1/8

N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-262 /TO-220SF MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO220F TO251 TO252 TO-262 TO220SF

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

6*

A

Continuous drain current (@T

3.8*

A

I

DM

Drain current pulsed

(note 1)

24

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

120

mJ

E

AR

Repetitive avalanche energy

(note 1)

9

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

24.5

147

156

192.3

36

W

0.2

1.2

1.3

1.54

0.3

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO220F

TO251

TO252 TO262 TO220SF

R

thjc

Thermal resistance, Junction to case

5.10

0.85

0.80

0.65

3.47

R

thja

Thermal resistance, Junction to ambient

49.4

80.0

70

48.6

*. Drain current is limited by junction temperature.

BV

I

D

: 6A

R

1. Gate 2. Drain 3. Source

TO-220F

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 6N65K

SW6N65K

TO-220F

TUBE

2

SW I 6N65K

SW6N65K

TO-251

TUBE

3

SW D 6N65K

SW6N65K

TO-252

REEL

4

SW U 6N65K

SW6N65K

TO-262

TUBE

5

SW MN 6N65K

SW6N65K

TO-220SF

TUBE

TO-251

1

2

3

TO-252

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 17nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charge,LED

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-262

1

2

3

1

2

3

1

2

3

TO-220SF

1

2

3