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Sep. 2016. Rev. 2.0

1/6

SW6N70DB

N-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F TO-252 TO-251N

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

6*

A

Continuous drain current (@T

3.8*

A

I

DM

Drain current pulsed

(note 1)

24

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

360

mJ

E

AR

Repetitive avalanche energy

(note 1)

25

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

25.5

174.9

236

W

0.2

1.4

1.9

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-252 TO-251N

R

thjc

Thermal resistance, Junction to case

4.9

0.7

0.53

R

thja

Thermal resistance, Junction to ambient

49

87

*. Drain current is limited by junction temperature.

BV

I

D

: 6A

R

1. Gate 2. Drain 3. Source

TO-220F

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 6N70DB

SW6N70DB

TO-220F

TUBE

2

SW D 6N70DB

SW6N70DB

TO-252

REEL

3

SW N 6N70DB

SW6N70DB

TO-251N

TUBE

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 30nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED, PC Power, Charge

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-252

TO-251N

1

2

3

1

2

3