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Dec. 2016. Rev. 3.0

1/7

SW7N65K2

N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F

TO-251

TO-252

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

7*

A

Continuous drain current (@T

4.4*

A

I

DM

Drain current pulsed

(note 1)

28

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

50

mJ

E

AR

Repetitive avalanche energy

(note 1)

3

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

20.5

113.6

125

W

0.16

0.91

1

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-251

TO-252

R

thjc

Thermal resistance, Junction to case

6.1

1.1

1.0

R

thja

Thermal resistance, Junction to ambient

49

89

*. Drain current is limited by junction temperature.

BV

I

D

: 7A

R

1. Gate 2. Drain 3. Source

TO-220F

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 7N65K2

SW7N65K2

TO-220F

TUBE

2

SW I 7N65K2

SW7N65K2

TO-251

TUBE

3

SW D 7N65K2

SW7N65K2

TO-252

REEL

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 14.5nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Charge,LED,

PC Power

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

1

2

3

TO-251

TO-252

1

2

3