Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

SW7N70K

Oct. 2015. Rev. 3.0

1/7

N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F TO-251 TO-252 TO-220

Drain to source voltage

700

V

7*

A

4.4*

A

Drain current pulsed

(note 1)

28

A

Gate to source voltage

±30

V

Single pulsed avalanche energy

(note 2)

120

mJ

Repetitive avalanche energy

(note 1)

9

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

24.5

147

156

133

W

0.2

1.2

1.3

1.06

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F TO-251 TO-252 TO-220

Thermal resistance, Junction to case

5.10

0.85

0.80

0.94

Thermal resistance, Junction to ambient

49.40

80.00

55.7

*. Drain current is limited by junction temperature.

BV

I

D

: 7A

R

DS(ON)

: 0.81Ω

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 7N70K

SW7N70K

TO-220F

TUBE

2

SW I 7N70K

SW7N70K

TO-251

TUBE

3

SW D 7N70K

SW7N70K

TO-252

REEL

4

SW P 7N70K

SW7N70K

TO-220

TUBE

1. Gate 2. Drain 3. Source

1

2

3

TO-220F

TO-251

TO-252

1

1

2

2

3

3

TO-220

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 17nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Charge,LED,

TV-Power

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.