SW8N65DB datasheet(1/6 Pages) SEMIPOWER

Part #	SW8N65DB

Description	N-channel Enhanced mode TO-251/TO-252 /TO-220F MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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1 / 6 page

Sep. 2016. Rev. 2.0

1/6

SW8N65DB

N-channel Enhanced mode TO-251/TO-252 /TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220F

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

C=25

oC)

8*

A

Continuous drain current (@T

C=100

oC)

5*

A

I

DM

Drain current pulsed

(note 1)

32

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

384

mJ

E

AR

Repetitive avalanche energy

(note 1)

23

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

178.6

156.3

17.9

W

Derating factor above 25oC

1.43

1.25

0.14

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220F

R

thjc

Thermal resistance, Junction to case

0.7

0.8

7.0

oC/W

R

thja

Thermal resistance, Junction to ambient

90

52.7

oC/W

*. Drain current is limited by junction temperature.

BV

DSS : 650V

I

D

: 8A

R

DS(ON) : 1.0Ω

1. Gate 2. Drain 3. Source

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 8N65DB

SW8N65DB

TO-251

TUBE

2

SW D 8N65DB

SW8N65DB

TO-252

REEL

2

SW F 8N65DB

SW8N65DB

TO-220F

TUBE

Features

 High ruggedness

 Low R

DS(ON) (Typ 1.0Ω)@VGS=10V

 Low Gate Charge (Typ 34nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED, Charge, PC Power

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including

Fast switching time, low on resistance, low gate charge and especially excellent

Avalanche characteristics.

TO-251

1

2

3

TO-252

1

2

3

TO-220F

1

2

3

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SW8N65DB Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

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