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RN4987FE Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # RN4987FE
Description  TOSHIBA Transistor Silicon NPN쨌PNP Epitaxial Type
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN4987FE Datasheet(HTML) 3 Page - Toshiba Semiconductor

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RN4987FE
2002-01-16
3
Electrical Characteristics (Ta
==== 25°C) (Q1)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50 V, IE = 0
¾
¾
100
Collector cut-off current
ICEO
VCE = 50 V, IB = 0
¾
¾
500
nA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.081
¾
0.15
mA
DC current gain
hFE
VCE = 5 V, IC = 10 mA
80
¾
¾
Collector-emitter saturation voltage
VCE (sat)
IC = 5 mA, IB = 0.25 mA
¾
0.1
0.3
V
Input voltage (ON)
VI (ON)
VCE = 0.2 V, IC = 5 mA
0.7
¾
1.8
V
Input voltage (OFF)
VI (OFF)
VCE = 5 V, IC = 0.1 mA
0.5
¾
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 5 mA
¾
250
¾
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
¾
3
6
pF
Electrical Characteristics (Ta
==== 25°C) (Q2)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = -50 V, IE = 0
¾
¾
-100
Collector cut-off current
ICEO
VCE = -50 V, IB = 0
¾
¾
-500
nA
Emitter cut-off current
IEBO
VEB = -6 V, IC = 0
-0.081
¾
-0.15
mA
DC current gain
hFE
VCE = -5 V, IC = -10 mA
80
¾
¾
Collector-emitter saturation voltage
VCE (sat)
IC = -5 mA, IB = -0.25 mA
¾
-0.1
-0.3
V
Input voltage (ON)
VI (ON)
VCE = -0.2 V, IC = -5 mA
-0.7
¾
-1.8
V
Input voltage (OFF)
VI (OFF)
VCE = -5 V, IC = -0.1 mA
-0.5
¾
-1.0
V
Transition frequency
fT
VCE = -10 V, IC = -5 mA
¾
200
¾
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
¾
3
6
pF
Electrical Characteristics (Ta
==== 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
¾
7
10
13
k
W
Resistor ratio
R1/R2
¾
0.191
0.213
0.232



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