SI7403DN datasheet(2/4 Pages) VISHAY

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Si7403DN

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71431

S-03390—Rev. A, 02-Apr-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"100

VDS = –20 V, VGS = 0 V

–1

Zero Gate Voltage Drain Current

IDSS

VDS = –20 V, VGS = 0 V, TJ = 70_C

–5

VDS = –5 V, VGS = –4.5 V

–10

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –2.5 V

–4

VGS = –4.5 V, ID = –3.3 A

0.078

0.1

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –2.9 A

0.110

0.135

Forward Transconductancea

gfs

VDS = –10 V, ID = –3.3 A

8.8

Diode Forward Voltagea

VSD

IS = –1.6 A, VGS = 0 V

0.8

–1.2

Dynamicb

Total Gate Charge

8.6

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –4.5 V, ID = –4.5 A

1.5

Gate-Drain Charge

Qgd

3.1

Turn-On Delay Time

td(on)

Rise Time

VDD = –10 V, RL = 10 W

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 10 W

ID ^ –1.6 A, VGEN = –4.5 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = –1.6 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

1234

01234

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

VGS = 4.5, 4, 3.5 V

1.5 V

2 V

2.5 V

3 V

TC = –55_C

125

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