STPS61150CW datasheet(3/4 Pages) STMICROELECTRONICS

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STPS61150CW

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100

150

200

250

300

350

400

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

t(s)

T =50°C

T =75°C

T =125°C

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

t (s)

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

I (µA)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

110

130

150

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

100

1000

10000

100

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

(A)

(V)

T =25°C

(maximum values)

T =125°C

(maximum values)

T =125°C

(typical values)

Fig. 9: Forward voltage drop versus forward

current (per diode).

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