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TPC8107 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TPC8107
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8107 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TPC8107
2003-02-20
4
ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
-2
-3
-4
-5
Common source
VDS = -10 V
Pulse test
0
-20
-30
-40
-50
-10
0
-1
100
Ta
= -55°C
25
-8
-12
-16
-20
Common source
Ta
= 25°C
Pulse test
0
-0.2
-0.3
-0.4
-0.5
-0.1
0
-4
ID = -13 A
-3
-6.5
0.3
-0.1
-0.3
-1
-3
-10
-30
-100
1
3
10
30
100
Common source
VDS = -10 V
Pulse test
Ta
= -55°C
100
25
0.3
-0.1
-0.3
-1
-3
-10
-30
-100
1
3
10
30
100
Common source
Ta
= 25°C
Pulse test
-10
VGS = -4 V
-2
-3
-4
-5
Common source
Ta
= 25°C
Pulse test
-2.2
VGS = -2 V
0
-20
-30
-40
-50
-10
0
-1
-3
-6
-8
-10
-2.4
-2.6
-2.8
-4
0
-4
-8
-12
-16
-20
Common source
Ta
= 25°C
Pulse test
VGS = -2 V
-2.2
-3
-4
-10
-8
-6
-2.4
-2.6
-2.8
-0.4
-0.6
-0.8
-1.0
0
-0.2



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