Composite Transistors

1

Publication date: June 2003

SJJ00178CED

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For switching/digital circuits

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• UNR2213 (UN2213) + UNR2113 (UN2113)

■ Absolute Maximum Ratings T

Marking Symbol: BZ

Internal Connection

4

Tr1

Tr2

5

6

1

3

2

Note) The part number in the parenthesis shows conventional part number.

Parameter

Symbol

Rating

Unit

Tr1

Collector-base voltage

50

V

(Emitter open)

Collector-emitter voltage

50

V

(Base open)

Collector current

100

mA

Tr2

Collector-base voltage

−50

V

(Emitter open)

Collector-emitter voltage

−50

V

(Base open)

Collector current

−100

mA

Overall

Total power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Unit: mm

10˚

1

3

2

0.12

+0.05

–0.02

6

5

4

(0.65) (0.65)

1: Emitter (Tr1)

4: Emitter (Tr2)

2: Base (Tr1)

5: Base (Tr2)

3: Collector (Tr2)

6: Collector (Tr1)

EIAJ: SC-88

SMini6-G1 Package