IXTC26N50P datasheet(1/5 Pages) IXYS

Part #	IXTC26N50P

Description	PolarHV Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

500

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C13

A

I

DM

T

C = 25°C, pulse width limited by TJM

78

A

I

AR

T

C = 25°C26

A

E

AR

T

C = 25°C40

mJ

E

AS

T

C = 25°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

10

V/ns

T

J ≤ 150°C, RG = 4 Ω

P

D

T

C = 25°C

100

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS, t = 1, leads-to-tab

2500

V~

F

C

Mounting Force

11..65/2.5..15

N/lb

Weight

2g

G = Gate

D = Drain

S = Source

DS99227(10/04)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 250 µA

500

V

GS(th)

V

DS = VGS, ID = 250µA

2.5

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS = 10 V, ID = IT

260

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

PolarHVTM

Power MOSFET

V

DSS

= 500

V

I

D25

=13

A

R

DS(on) =

260 m

Ω

Electrically Isolated Tab,

N-Channel Enhancement Mode,

Avalanche Rated

ISOPLUS220TM

(IXTC)

E153432

Advanced Technical Information

G

D

S

Isolated Tab

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<30pF)

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Advantages

Easy assembly

Space savings

High power density

IXTC 26N50P

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