Electrical Characteristics (T =25℃Unless otherwise specified)

pad areas

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper

ES3K C

THRU ES3MC

Super Fast Recovery Rectifier Diode

SMC Plastic-Encapsulate Diodes

HD CK 84

SMC

Features

●Io

3A

●VRRM

800V-1000V

●High surge current capability

Applications

●Rectifier

●

: From K To M

X

Marking

Polarity: Color band denotes cathode

●

Glass passivated chip

●

ES3XC

1

H

igh Diode Semiconductor

ES3

Item

Symbol

Unit

Test Conditions

Repetitive Peak Reverse Voltage

V

Average Forward Current

A

60HZ Half-sine wave, Resistance

3.0

Surge(Non-repetitive)Forward

Current

A

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

100

Junction Temperature

℃

-55~+150

Storage Temperature

℃

-55 ~ +150

V

Maximum RMS

Voltage

K

M

800

1000

560

700

ES3

Item

Symbol

Unit

Test Condition

Peak Forward Voltage

V

F

V

I

Maximum reverse recovery

time

ns

35

I

RRM1

Ta =25℃

5

Peak Reverse Current

I

RRM2

μA

Ta =100℃

50

Between junction and ambient

40

1)

Thermal

Resistance(Typical)

/W

℃

Between junction and terminal

12

1)

K

M

4.0