.

Specifications and information are subject to change without notice

WJ Communications, Inc

Phone 1-800-WJ1-4401 FAX: 408-577-6621

e-mail: sales@wj.com

Web site: www.wj.com

December 2004

AH110

0.2 Watt, High Linearity InGaP HBT Amplifier

Product Information

Product Features

Applications

Product Description

The AH110 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able to achieve performance over a broad range with +39

dBm OIP3 and +23 dBm of compressed 1-dB power and is

housed in an industry standard SOT-89 SMT package. All

devices are 100% RF and DC tested.

The product is targeted for use as a gain block/driver

amplifier for various current and next generation wireless

technologies such as GPRS, GSM and CDMA, where high

linearity and medium power is required. In addition, the

AH110 will work for numerous other applications within

the 50 to 2000 MHz frequency range.

Functional Diagram

RF IN

GND

RF OUT

GND

1

2

3

4

AH110-89 / AH110-89G

Parameters

Units Min

Typ

Max

Test Frequency

MHz

900

Gain

dB

20.5

Output P1dB

dBm

+23

Output OIP3

dBm

+39

Test Frequency

MHz

1900

Gain

dB

17

17.6

Input Return Loss

dB

17

Output Return Loss

dB

7.4

Output P1dB

dBm

+23

dBm

+36.5

+38

IS-95A Channel Power

@ -45 dBc ACPR, 1900 MHz

dBm

+16

Noise Figure

dB

5.2

mA

85

100

135

V

5

1. Test conditions unless otherwise noted: 25 C, Vsupply = +8V, in tuned application circuit with

Rbias = 30 .

2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. The tuned

application circuit is tuned for optimum ACPR performance. An improvement in OIP3 of 2 to 3

dB can be achieved for tuning for optimum OIP3 (with slightly degraded ACPR performance).

3. This corresponds to the quiescent current or operating current under small-signal conditions.

4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms

are recommended for proper operation. Operation of the device directly to a 5 V supply could lead

to thermal damage to the device.

Parameters

Units

Typical

Frequency

MHz

900

1900

S21 – Gain

dB

20.5

17.6

S11 – Input R.L.

dB

-20

-17

S22 – Output R.L.

dB

-9.5

-7.4

Output P1dB

dBm

dBm

+22.8

+39

+23

+38

dBm

+17

+16

Noise Figure

dB

5

5.2

Supply Bias

+8 V @ 100 mA

100 mA, +25 C, Rbias = 30 .

6. This is measured with an IS-95 signal at (9 ch. Fwd)–45dBc ACPR.

Absolute Maximum Rating

Ordering Information

Parameters

Rating

Part No.

Description

Operating Case Temperature

-40 to +85

qC

AH110-89

InGaP HBT Gain Block

(leaded SOT-89 Pkg)

Storage Temperature

-55 to +150

qC

AH110-89G

InGaP HBT Gain Block

(lead-free/green/RoHS-compliant SOT-89 Pkg)

RF Input Power (continuous)

+15 dBm

AH110-89PCB900

900 MHz Evaluation Board

Device Voltage

+6 V

AH110-89PCB1900

1900 MHz Evaluation Board

Device Current

150 mA

Device Power

1.5 W

Junction Temperature

+250

qC

Operation of this device above any of these parameters may cause permanent damage.