D965SS datasheet(1/3 Pages) UTC

Part #	D965SS

Description	NPN EPITAXIAL SILICON TRANSISTOR

PDF	3 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTCD965SS / D965ASS

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R206-016,B

LOW VOLTAGE HIGH CURRENT

NPN TRANSISTOR

FEATURES

*Collector current up to 5A

* D965SS : Collector-Emitter voltage up to 20 V

* D965ASS : Collector-Emitter voltage up to 30 V

APPLICATIONS

* Audio amplifier

* Flash unit of camera

* Switching circuit

MARKING(D965SS)

MARKING(D965ASS)

SOT-23

1

2

3

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

D965SS

D965ASS

VCEO

20

30

V

Emitter-base voltage

VEBO

7

V

Collector dissipation(Ta=25

°C)

Pc

750

mW

Collector current

Ic

5

A

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BVCBO

Ic=100

µA,IE=0

40

V

Collector-emitter breakdown voltage

D965SS

D965ASS

BVCEO

Ic=1mA,IB=0

20

30

V

Emitter-base breakdown voltage

BVEBO

IE=10

µA,Ic=0

7

V

Collector cut-off current

ICBO

VCB=10V,IE=0

100

nA

Emitter cut-off current

IEBO

VEB=7V,Ic=0

100

nA

D65

D65A

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