D2017UK

Document Number 3040

Issue 1

Website: http://www.semelab.co.uk

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

29W

65V

±20V

2A

–65 to 150°C

200°C

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 28V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND

APPLICATIONS

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from DC to 1 GHz

METAL GATE RF SILICON FET

TetraFET

H

E

C

A

B

D

(2 p l s )



!

F

G

DP

PIN 1

SOURCE

PIN 2

DRAIN

PIN 3

GATE

DIM

mm

Tol.

Inches

Tol.

A

16.51

0.25

0.650

0.010

B

6.35

0.13

0.250

0.005

C

45°

5°

45°

5°

D

1.52

0.13

0.060

0.005

E

6.35

0.13

0.250

0.005

F

0.13

0.03

0.005

0.001

G

3.56

0.51

0.140

0.020

H

0.64

0.13

0.024

0.005