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D965ASS Datasheet(PDF) 2 Page - Unisonic Technologies

Part # D965ASS
Description  NPN EPITAXIAL SILICON TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

D965ASS Datasheet(HTML) 2 Page - Unisonic Technologies

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UTCD965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-016,B
DC current gain(note)
hFE
VCE=2V,Ic=1mA
VCE=2V,Ic=0.5A
VCE=2V,Ic=2A
230
150
200
800
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter saturation voltage
VCE(sat)
Ic=3A, IB= 0.1A
1
V
Current gain bandwidth product
fT
VCE=6V,Ic=50mA
150
MHz
Output capacitance
Cob
VCB=20V,IE=0
f=1MHz
50
pF
CLASSIFICATION OF hFE2
RANK
Q
R
S
RANGE
230-380
340-600
560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
0
0.4
0.8
1.2
1.6
2.0
0
1.0
1.5
2.0
2.5
3.0
IB=0.5mA
IB=1.0mA
IB=1.5mA
IB=2.0mA
IB=2.5mA
IB=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
10
2
10
1
10
0
10
3
10
4
10
3
10
2
10
1
10
-1
VCE=2V
Fig.3 Base-Emitter on Voltage
10
1
10
2
10
3
10
4
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
VCE=2V
Ic,Collector current (mA)
10
4
10
3
10
2
10
1
10
0
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
VCE(sat)
VBE(sat)
Ic=10*IB
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
10
0
10
1
10
2
VCE=6V
Collector-Base voltage (V)
10
3
10
3
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
f=1MHz
IE=0



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