Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

August 2004

ECP053

½ Watt, High Linearity InGaP HBT Amplifier

Product Information

The Communications Edge

TM

Product Features

4mm QFN package

Applications

Product Description

The ECP053 is a high dynamic range driver amplifier in

a low-cost surface mount package.

The InGaP/GaAs

HBT is able to achieve high performance for various

narrowband-tuned application circuits with up to +43

dBm OIP3 and +28 dBm of compressed 1dB power. It is

housed in an industry standard SOIC-8 or 16-pin 4x4mm

QFN SMT package. All devices are 100% RF and DC

tested.

The ECP053 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required.

An internal active bias allows the

ECP053 to maintain high linearity over temperature and

operate directly off a single +5V supply.

This

combination makes the device an excellent candidate for

driver

amplifier

stages

in

wireless-LAN,

digital

multimedia broadcast, or fixed wireless applications. The

device can also be used in next generation RFID readers.

Functional Diagram

ECP053D

ECP053G

Specifications

(1)

Parameter

Units

Min

Typ

Max

Operational Bandwidth

MHz

2300

2700

Test Frequency

MHz

2450

Gain

dB

13

Input Return Loss

dB

20

Output Return Loss

dB

8

Output P1dB

dBm

+27

Output IP3

(2)

dBm

+42

Noise Figure

dB

5.3

Test Frequency

MHz

2600

Gain

dB

12

Input Return Loss

dB

23

Output Return Loss

dB

8

Output P1dB

dBm

+27

Output IP3

(2)

dBm

+42

Operating Current Range, Icc

(3)

mA

200

250

300

Device Voltage, Vcc

V

+5

Test conditions unless otherwise noted.

1. T = 25ºC, Vsupply = +5 V, Frequency = 2650 MHz, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a

reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100

Ω. (ie. total device current typically will be 262 mA.)

Absolute Maximum Rating

Ordering Information

Parameters

Rating

Part No.

Description

Operating Case Temperature

-40 to +85

°C

ECP053D

½ Watt InGaP HBT Amplifier (16p 4mm Pkg)

Storage Temperature

-65 to +150

°C

ECP053G

½ Watt InGaP HBT Amplifier (Soic-8 Pkg)

RF Input Power (continuous)

+28 dBm

ECP053D-PCB2450

2450 MHz Evaluation Board

Device Voltage

+8 V

ECP053D-PCB2600

2600 MHz Evaluation Board

Device Current

400 mA

ECP053G-PCB2450

2450 MHz Evaluation Board

Device Power

2 W

ECP053G-PCB2600

2600 MHz Evaluation Board

Operation of this device above any of these parameters may cause permanent damage.

1

2

3

4

12

11

10

9

16

15

14

13

5

6

7

8

N/C

RF OUT

RF OUT

N/C

Vref

N/C

RF IN

N/C

1

2

3

4

8

7

6

5

Vref

N/C

RF IN

N/C

Vbias

RF OUT

RF OUT

N/C