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4N70 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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4N70 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 4N70 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 700 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.0 4.5 V VSD Diode Forward On-voltage IS= 4A ;VGS= 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2A 2.5 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=700V; VGS= 0 250 µA Gfs Forward Transconductance VDS= 50V;ID=2A 2.5 S td(on) Turn-on Delay Time ID=5A; VGS=10V; 60 ns tr Rise Time 150 td(off) Turn-off Delay Time 300 tf Fall Time 130 |
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