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BD138 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD138
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD138 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
BD138
DESCRIPTION
·
DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A
·
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -60V(Min)
·
Complement to type BD137
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
IB
Base Current-Continuous
-0.5
A
PC
Collector Power Dissipation
@ Ta=25℃
1.25
W
Collector Power Dissipation
@ TC=25℃
12.5
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
10
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
100
℃
/W


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