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BD830 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD830 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor BD830 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA; IB= -50mA -0.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -2V -1.0 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -0.1 uA VCB=-30V; IE= 0; TC= 125℃ -10 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 uA hFE-1 DC Current Gain IC= -5mA ; VCE= -2V 25 hFE-2 DC Current Gain IC= -150mA ; VCE= -2V 40 250 hFE-3 DC Current Gain IC= -500mA ; VCE=- 2V 25 fT Current-Gain—Bandwidth Product IC= -50mA ; VCE=- 5V 75 MHz |
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