IRF6665 datasheet(4/8 Pages) IRF

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IRF6665

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

100

TJ = -40°C

TJ = 25°C

TJ = 150°C

VGS = 0V

100

125

150

TC , Case Temperature (°C)

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

100

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

Ri (°C/W)

τi (sec)

1.6195

0.000126

2.1406

0.001354

22.2887

0.375850

20.0457

7.410000

11.9144

Ci=

τi/Ri

Ci=

τi/Ri

100

1000

VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

Tc = 25°C

Tj = 150°C

Single Pulse

100µsec

1msec

10msec

-75

-50

-25

100 125 150

TJ , Temperature ( °C )

2.5

3.0

3.5

4.0

4.5

5.0

5.5

ID = 250µA

ID = 1.0mA

ID = 1.0A

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