IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

30

52

S

C

iss

4800

pF

C

oss

V

900

pF

C

rss

210

pF

t

d(on)

29

ns

t

r

V

20

ns

t

d(off)

R

78

ns

t

f

22

ns

Q

g(on)

142

nC

Q

gs

V

32

nC

Q

gd

74

nC

R

thJC

0.25 K/W

R

thCH

TO-3P

0.21

K/W

TO-264

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

82

A

I

SM

Repetitive

250

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

200

ns

-di/dt = 100 A/

µs

Q

RM

V

2.0

µC

IXTK 82N25P IXTQ 82N25P

IXTT 82N25P

TO-268 Outline

TO-3P Outline

TO-264 AA Outline