© 2000 IXYS All rights reserved

1 - 2

500

150

200

100

9

200

15

0.52

1.06

75

822

75

582

2880

3000

3600

-40...+150

-40...+125

110

115200

117100

93300

94800

4800

5280

4320

4750

150

12.7

9.6

50

2.25-2.75/20-25

4.50-5.50/40-48

300

0.84

1.10

520

1.08

1.25

0.114

0.071

5

4

160

Dimensions in mm (1 mm = 0.0394")

Features

q

International standard package

with DCB ceramic base plate

q

Planar passivated chips

q

Short recovery time

q

Low switching losses

q

Soft recovery behaviour

q

Isolation voltage 3600 V~

q

UL registered E 72873

Applications

q

Antiparallel diode for high frequency

switching devices

q

Free wheeling diode in converters

and motor control circuits

q

Inductive heating and melting

q

Uninterruptible power supplies (UPS)

q

Ultrasonic cleaners and welders

Advantages

q

High reliability circuit operation

q

Low voltage peaks for reduced

protection circuits

q

Low noise switching

q

Low losses

x I

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

1750

3

1

V

RSM

V

RRM

Type

V

V

200

200

MEO 550-02DA

Symbol

Test Conditions

Maximum Ratings

I

FRMS

T

C

=

°CA

I

x

T

C

=

°C; rectangular, d = 0.5

A

I

FRM

t

A

I

FSM

T

t = 10 ms (50 Hz), sine

A

t = 8.3 ms (60 Hz), sine

A

T

t = 10 ms (50 Hz), sine

A

t = 8.3 ms (60 Hz), sine

A

T

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

T

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

T

VJ

°C

T

stg

°C

T

Smax

°C

P

tot

T

V

ISOL

50/60 Hz, RMS t = 1 min

V~

I

t = 1 s

V~

M

d

Mounting torque (M6)

Nm/lb.in.

Terminal connection torque (M6)

Nm/lb.in.

d

S

Creep distance on surface

mm

d

A

Strike distance through air

mm

a

Maximum allowable acceleration

Weight

g

Symbol

Test Conditions

Characteristic Values (per diode)

typ.

max.

I

R

T

= V

RRM

mA

T

= 0.8 • V

RRM

mA

T

= 0.8 • V

RRM

mA

V

F

I

A;

T

T

I

A;

T

T

V

T0

For power-loss calculations only

V

r

T

m

W

R

thJH

DC current

K/W

R

thJC

DC current

K/W

t

rr

I

F

=

A

T

I

RM

V

V

T

25

°CA

-di/dt =

A/

msT

Fast Recovery

Epitaxial Diode

(FRED) Module

MEO 550-02 DA

V

I

FAVM

= 582 A

t

rr

= 150 ns

3

1