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VBO 50

V

RSM

V

RRM

Type

VV

800

800

VBO 50-08NO7

1200

1200

VBO 50-12NO7

1400

1400

VBO 50-14NO7

1600

1600

VBO 50-16NO7

1800

1800

VBO 50-18NO7*

Symbol

Conditions

Maximum Ratings

I

dAVM

T

°C, module

50

A

I

FSM

T

°C;

t = 10 ms (50 Hz), sine

750

A

V

t = 8.3 ms (60 Hz), sine

820

A

T

t = 10 ms (50 Hz), sine

670

A

V

t = 8.3 ms (60 Hz), sine

740

A

T

°C

t = 10 ms (50 Hz), sine

2800

V

t = 8.3 ms (60 Hz), sine

2820

T

t = 10 ms (50 Hz), sine

2250

V

t = 8.3 ms (60 Hz), sine

2300

T

VJ

-40...+150

°C

T

VJM

150

°C

T

stg

-40...+150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL

≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque (M5)

5

±15%

Nm

44

±15% lb.in.

Terminal connection torque (M5)

3

±15%

Nm

26

±15% lb.in.

Weight

typ.

260

g

Features

• Package with screw terminals

• Isolation voltage 3000 V~

• Planar passivated chips

• Blocking voltage up to 1800 V

• Low forward voltage drop

• UL registered E 72873

Applications

• Supplies for DC power equipment

• Input rectifiers for PWM inverter

• Battery DC power supplies

• Field supply for DC motors

Advantages

• Easy to mount with two screws

• Space and weight savings

• Improved temperature and power cycling

Symbol

Conditions

Characteristic Values

I

R

V

R

= V

°C

≤

0.3

mA

V

R

= V

≤

10.0

mA

V

F

I

F

= 150 A;

T

°C

≤

1.6

V

V

T0

For power-loss calculations only

0.85

V

r

T

T

8m

Ω

R

thJC

per diode; DC current

2.6

K/W

per module

0.65

K/W

R

thJK

per diode; DC current

2.84

K/W

per module

0.71

K/W

Dimensions in mm (1 mm = 0.0394")

Data according to IEC 60747 refer to a single diode unless otherwise stated.

I

dAVM

= 50 A

V

Single Phase

Rectifier Bridge

~

+

~

-

* delivery time on request

+

–

~

~