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1 - 2

DSEP 9-06CR

I

FAV

=9 A

V

RRM

= 600 V

t

rr

= 15 ns

V

RSM

V

RRM

Type

V

V

600

600

DSEP 9-06CR

Symbol

Conditions

Maximum Ratings

I

FRMS

50

A

I

FAVM

T

9

A

I

FRM

t

tbd

A

I

FSM

T

80

A

E

AS

T

0.5

mJ

I

I

AR

V

0.2

A

T

VJ

-55...+175

°C

T

VJM

175

°C

T

stg

-55...+150

°C

P

tot

T

150

W

V

ISOL

50/60 Hz RMS; I

2500

V~

F

C

mounting force with clip

20...120

N

Weight

typical

6

g

Symbol

Conditions

Characteristic Values

typ.

max.

I

R

①

T

V

50

µA

T

0.2

mA

V

F

②

I

T

2.9

V

T

25°C

4.0

V

R

thJC

1

K/W

R

thCH

0.25

K/W

t

rr

I

15

ns

V

I

RM

V

I

3.5

4.1

A

T

with soft recovery

(Electrically Isolated Back Surface)

A = Anode, C = Cathode

* Patent pending

A

C

Isolated back surface *

C

A

Pulse test:

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

Features

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low cathode to tab capacitance (< 25pF)

• International standard package

• Planar passivated chips

• Very short recovery time

• Extremely low switching losses

• Low I

• Soft recovery behaviour

• Epoxy meets UL 94V-0

• Isolated and UL registered E153432

Applications

• Antiparallel diode for high frequency

switching devices

• Antisaturation diode

• Snubber diode

• Free wheeling diode in converters

and motor control circuits

• Rectifiers in switch mode power

supplies (SMPS)

• Inductive heating

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

• Avalanche voltage rated for reliable

operation

• Soft reverse recovery for low EMI/RFI

• Low I

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Dimensions see Outlines.pdf