© 2000 IXYS All rights reserved

1 - 1

with soft recovery

(Electrically Isolated Back Surface)

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

A = Anode, C = Cathode

* Patent pending

A

C

Isolated back surface *

C

A

Advanced Technical Information

Features

q

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

q

Low cathode to tab capacitance (<25pF)

q

International standard package

q

Planar passivated chips

q

Very short recovery time

q

Extremely low switching losses

q

Low I

q

Soft recovery behaviour

q

Epoxy meets UL 94V-0

q

Isolated and UL registered E153432

Applications

q

Antiparallel diode for high frequency

switching devices

q

Antisaturation diode

q

Snubber diode

q

Free wheeling diode in converters

and motor control circuits

q

Rectifiers in switch mode power

supplies (SMPS)

q

Inductive heating

q

Uninterruptible power supplies (UPS)

q

Ultrasonic cleaners and welders

Advantages

q

Avalanche voltage rated for reliable

operation

q

Soft reverse recovery for low EMI/RFI

q

Low I

- Power dissipation within the diode

- Turn-on loss in the commutating

switch

q

spring mounting

Dimensions see IXYS CD 2000

DSEP 30-12CR

I

FAV

= 30 A

V

t

rr

= 20 ns

V

RSM

V

RRM

Type

V

V

1200

1200

DSEP 30-12CR

Symbol

Conditions

Maximum Ratings

I

FRMS

70

A

I

FAVM

T

30

A

I

FRM

t

tbd

A

I

FSM

T

250

A

E

AS

T

0.2

mJ

I

I

AR

V

0.1

A

T

VJ

-55...+175

°C

T

VJM

175

°C

T

stg

-55...+150

°C

P

tot

T

165

W

V

ISOL

50/60 Hz RMS; I

2.5

kV

Mounting force with clip

10...50/2...10

N/lb.

Weight

typical

6

g

Symbol

Conditions

Characteristic Values

typ.

max.

I

R

x

T

V

250

µA

T

2mA

V

F

y

I

T

3.1

V

T

25°C

5.0

V

R

thJC

0.9

K/W

R

thCH

with heatsink compound

0.25

K/W

t

rr

I

20

ns

V

I

RM

V

I

4.0

A

T