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L507 Datasheet(PDF) 1 Page - IXYS Corporation

Part # L507
Description  HiPerFRED Epitaxial Diode with soft recovery
PDF  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

L507 Datasheet(HTML) 1 Page - IXYS Corporation

  L507 Datasheet HTML 1Page - IXYS Corporation L507 Datasheet HTML 2Page - IXYS Corporation  
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© 2003 IXYS All rights reserved
1 - 2
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
● International standard package
miniBLOC
● Isolation voltage 2500 V~
● UL registered E 72873
● 2 independent FRED in 1 package
● Planar passivated chips
● Very short recovery time
● Extremely low switching losses
● Low I
RM-values
● Soft recovery behaviour
Applications
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode in converters
and motor control circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Inductive heating
● Uninterruptible power supplies (UPS)
● Ultrasonic cleaners and welders
Advantages
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low
EMI/RFI
● Low I
RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
miniBLOC, SOT-227 B
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300
µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
D4
I
FAV
= 2x 100 A
V
RRM = 400 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V
V
400
400
DSEP 2x 101-04A
Symbol
Conditions
Maximum Ratings
I
FRMS
100
A
I
FAVM
T
C = 60°C; rectangular, d = 0.5
100
A
I
FSM
T
VJ = 45°C; tp = 10 ms (50 Hz), sine
1000
A
E
AS
T
VJ = 25°C; non-repetitive
2
mJ
I
AS = 4 A; L = 180 µH
I
AR
V
A = 1.5·VR typ.; f = 10 kHz; repetitive
0.4
A
T
VJ
-40...+150
°C
T
VJM
150
°C
T
stg
-40...+150
°C
P
tot
T
C = 25°C
200
W
V
ISOL
50/60 Hz, RMS
2500
V~
I
ISOL ≤ 1 mA
M
d
mounting torque (M4)
1.1-1.5/9-13
Nm/lb.in.
terminal connection torque (M4)
1.1-1.5/9-13
Nm/lb.in.
Weight
typical
30
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
①
V
R
= V
RRM;TVJ =
25°C
1
mA
T
VJ = 150°C
4
mA
V
F
②
I
F = 100 A;
T
VJ = 125°C
1.24
V
T
VJ =
25°C
1.54
V
R
thJC
0.6
K/W
R
thCH
with heatsink compound
0.1
K/W
t
rr
I
F = 1 A; -di/dt = 400 A/µs;
30
ns
V
R = 30 V; TVJ = 25°C
I
RM
V
R = 100 V;
I
F = 200 A; -diF/dt = 100 A/µs
5.5
6.8
A
T
VJ = 100°C
DSEP 2x 101-04A


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