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L507 Datasheet(PDF) 1 Page - IXYS Corporation |
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L507 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2003 IXYS All rights reserved 1 - 2 HiPerFREDTM Epitaxial Diode with soft recovery Features ● International standard package miniBLOC ● Isolation voltage 2500 V~ ● UL registered E 72873 ● 2 independent FRED in 1 package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low I RM-values ● Soft recovery behaviour Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode in converters and motor control circuits ● Rectifiers in switch mode power supplies (SMPS) ● Inductive heating ● Uninterruptible power supplies (UPS) ● Ultrasonic cleaners and welders Advantages ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low I RM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf miniBLOC, SOT-227 B Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. D4 I FAV = 2x 100 A V RRM = 400 V t rr = 30 ns V RSM V RRM Type V V 400 400 DSEP 2x 101-04A Symbol Conditions Maximum Ratings I FRMS 100 A I FAVM T C = 60°C; rectangular, d = 0.5 100 A I FSM T VJ = 45°C; tp = 10 ms (50 Hz), sine 1000 A E AS T VJ = 25°C; non-repetitive 2 mJ I AS = 4 A; L = 180 µH I AR V A = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A T VJ -40...+150 °C T VJM 150 °C T stg -40...+150 °C P tot T C = 25°C 200 W V ISOL 50/60 Hz, RMS 2500 V~ I ISOL ≤ 1 mA M d mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in. terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in. Weight typical 30 g Symbol Conditions Characteristic Values typ. max. I R ① V R = V RRM;TVJ = 25°C 1 mA T VJ = 150°C 4 mA V F ② I F = 100 A; T VJ = 125°C 1.24 V T VJ = 25°C 1.54 V R thJC 0.6 K/W R thCH with heatsink compound 0.1 K/W t rr I F = 1 A; -di/dt = 400 A/µs; 30 ns V R = 30 V; TVJ = 25°C I RM V R = 100 V; I F = 200 A; -diF/dt = 100 A/µs 5.5 6.8 A T VJ = 100°C DSEP 2x 101-04A |
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