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56NT Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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56NT Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor Ltd. 56NT 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Phase Control Thyristors (Stud & Lead Type), 56A Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Voltage Ratings (TJ = 25 oC, unless otherwise noted) Type number Voltage Code VDRM/VRRM, Maximum repetitive peak and off-state voltage (V) VRSM, Maximum non- repetitive peak voltage (V) IDRM/IRRM, Maximum at TJ=TJ Maximum (mA) 20 200 300 40 400 500 60 600 700 56NT 80 800 900 10 100 1000 1100 120 1200 1300 160 1600 1700 Electrical Ratings (TJ = 25 oC, unless otherwise noted) Parameters Symbol Values Units Maximum on-state average current TJ = 85 oC IT(AV) 56 A Maximum RMS on-state current IT(RMS) 88 A Maximum peak, one cycle non-repetitive surge current TJ = 25 oC, 10 ms ITSM 1300 A TJ = 130 oC, 10 ms 1100 Maximum I 2t for fusing TJ = 25 oC, 10 ms I 2t 8450 A 2s TJ = 130 oC, 10 ms 6050 Maximum peak on-state voltage TJ = 25 oC VTM 1.8 V Maximum holding current TJ = 25 oC IH 200 mA Maximum latching current TJ = 25 oC IL 400 mA Maximum rate of rise of turn-on current TJ = TJ max. di/dt 150 A/µs Maximum critical rate of rise of off-state voltage TJ = TJ max. dv/dt 500 V/µs Maximum gate current required to trigger TJ = 25 oC IGT 150 mA Maximum gate voltage required to trigger TJ = 25 oC VGT 3 V Thermal and Mechanical Specifications (TJ = 25 oC, unless otherwise noted) Parameters Symbol Values Units Maximum operating junction temperature range TJ - 40 to +130 oC Maximum storage temperature range TStg - 50 to +150 oC Maximum thermal resistance, junction to case Rth(JC) 0.5 oC/W Mounting torque F 3.5 Nm Approximate weight W 21 g TO-208AC (TO-65) |
Similar Part No. - 56NT_17 |
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Similar Description - 56NT_17 |
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