FML20N60 datasheet(2/7 Pages) FCI

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Electrical Characteristics ( T

C = 25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

600

Δ BV

DSS/

Δ T

Breakdown Voltage Temperature

coefficient

ID = 250uA, referenced to 25 °C

0.6

V/°C

IDSS

Drain-Source Leakage Current

VDS = 600V, VGS = 0V

VDS = 480V, TC = 125 °C

100

IGSS

Gate-Source Leakage, Forward

VGS = 30V, VDS = 0V

100

Gate-source Leakage, Reverse

VGS = -30V, VDS = 0V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

2.0

4.0

RDS(ON)

Static Drain-Source On-state Resis-

tance

VGS =10 V, ID = 12.0A

-0.26

0.32

Ω

Dynamic Characteristics

Ciss

Input Capacitance

VGS =0 V, VDS =25V, f = 1MHz

3150

Coss

Output Capacitance

405

Crss

Reverse Transfer Capacitance

Dynamic Characteristics

td(on)

Turn-on Delay Time

VDD =300V, ID =20.0A, RG =25Ω

(Note 4, 5)

Rise Time

225

td(off)

Turn-off Delay Time

160

Fall Time

140

Total Gate Charge

VDS =480V, VGS =10V, ID =20.0A

(Note 4, 5)

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge(Miller Charge)

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit.

Continuous Source Current

Integral Reverse p-n Junction

Diode in the MOSFET

20.0

ISM

Pulsed Source Current

80.0

VSD

Diode Forward Voltage

IS =20.0A, VGS =0V

1.4

trr

Reverse Recovery Time

IS=20.0A,VGS=0V, dIF/dt=100A/us

-400

Qrr

Reverse Recovery Charge

500

※ NOTES

1. Repeativity rating : pulse width limited by junction temperature

2. L = 5.5mH, IAS =20.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C

3. ISD ≤ 20.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

FML20N60 20Amps 600 Voltage N Channel MOSFET

FML20N60 Datasheet(PDF) 2 Page - First Components International

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