BC817 datasheet(1/1 Pages) FCI

Part #	BC817

Description	NPN Silicon Epitaxial Plannar Transistors

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Manufacturer	FCI [First Components International]

Direct Link	http://www.cotra.com.tw/

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BC817-16LT1

1.3

2.4

Unit : mm

SOT—23

1. BASE

2. EMITTER

3. COLLECTOR

BC817-25LT1

BC817-40LT1

FEATURES

Power dissipation

PCM :

0.3

W（Tamb=25℃）

Collector current

ICM

:

0.5

A

Collector-base voltage

VCBO :

50

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

VCBO

Ic= 10 μA， IE=0

50

V

Collector-emitter breakdown voltage

VCEO

Ic= 10

mA， IB=0

45

V

Emitter-base breakdown voltage

VEBO

IE= 1

μA， I

C=0

5

V

Collector cut-off current

ICBO

VCB= 45

V ,

IE=0

0.1

μA

Collector cut-off current

ICEO

VCE= 40

V ,

IB=0

0.2

μA

Emitter cut-off current

IEBO

VEB= 4

V，

IC=0

0.1

μA

DC current gain

817-16

817-25

817-40

hFE（1）

VCE= 1 V,

IC= 100mA

100

160

250

400

600

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA,

IB= 50 mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= 500 mA,

IB= 50mA

1.2

V

Transition frequency

fT

VCE= 5 V,

IC= 10mA

f=100MHz

100

MHz

DEVICE MARKING

BC817-16LT1=6A; BC817-25LT1=6B; BC817-40LT1=6C

NPN Silicon Epitaxial Plannar Transistors

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