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IRF820 Datasheet(PDF) 2 Page - First Components International |
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IRF820 Datasheet(HTML) 2 Page - First Components International |
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2 / 3 page ![]() ORDERING INFORMATION Part Number Package IRF820-251............................................TO-251 ..................IRF820-DP............................................TO-252 ..................IRF820-220............................................TO-220 ..................IRF820-220FP TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . IRF820 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) V(BR)DSS 600 V Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125 ) IDSS 0.1 1.0 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 A) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.2A) * RDS(on) 4.4 Forward Transconductance (VDS 50 V, ID = 1.0A) * gFS 1.4 mhos Input Capacitance Ciss 435 pF Output Capacitance Coss 56 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 9.2 pF Turn-On Delay Time td(on) 12 ns Rise Time tr 21 ns Turn-Off Delay Time td(off) 30 ns Fall Time (VDD = 300 V, ID = 2.0 A, VGS = 10 V, RG = 18 ) * tf 24 ns Total Gate Charge Qg 13 22 nC Gate-Source Charge Qgs 2.0 nC Gate-Drain Charge (VDS = 400 V, ID = 2.0 A, VGS = 10 V)* Qgd 6.0 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS = 2.0 A, VGS = 0 V, dIS/dt = 100A/µs) trr 340 ns * Pulse Test: Pulse Width 300µs, Duty Cycle 2% ** Negligible, Dominated by circuit inductance IRF820 20A 600V N CHANNEL POWER MOSFET |
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