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BFC11 Datasheet(PDF) 2 Page - Seme LAB

Part # BFC11
Description  4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BFC11 Datasheet(HTML) 2 Page - Seme LAB

  BFC11 Datasheet HTML 1Page - Seme LAB BFC11 Datasheet HTML 2Page - Seme LAB  
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BFC11
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
27
108
1.8
505
1010
1200
12
23
46
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
IS
ISM
VSD
trr
Qrr
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.]
dls / dt = 100A/µs
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Min.
Typ.
Max. Unit
3
5
2500
35
13
LD
LS
VIsolation
CIsolation
Torque
Internal Drain Inductance (Measured From Drain Terminal to Centre of Die)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
f = 1MHz
Maximum Torque for Device Mounting Screws and Electrical Terminations
nH
V
pF
in–lbs
Characteristic
Min.
Typ.
Max. Unit
0.24
0.05
RθJC
RθCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
pF
nC
ns
5780
6800
725
1015
240
360
245
370
28
40
113
170
14
28
14
28
48
72
12
24
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.



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