2SC3130 datasheet(2/6 Pages) FOSHAN

2 / 6 page

2SC3130

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

3.0

Collector Current

Collector Power Dissipation

150

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector-emitter voltage

VCEO

IC=2.0mA

IB=0

Emitter-base voltage

VEBO

IC=10μA

IB=0

3.0

Collector Cut-Off Current

ICBO

VCB=10V

IE=0

1.0

μA

DC Current Gain

hFE

VCE=4.0V

Ic=5.0mA

220

hFE:VCE=4.0V Ic=100μA

0.75

1.60

hFE ratio

*△hFE

hFE:VCE=4.0V Ic=5.0mA

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=20mA

IB=4.0mA

0.5

Transition Frequency

VCE=4.0V

IC=-5.0mA

f=200MHz

1.4

1.9

2.5

GHz

Collector output capacitance

Cob

VCB=4.0V

IE=0,

f=1.0MHz

1.4

Reverse transfer capacitance

(Common emitter)

Crb

VCB=4.0V

IE=0,

f=1.0MHz

0.45

Collector-base parameter

rbb’Cc

VCB=4.0V

IC=5.0mA

f=31.9MHz

*△hFE= hFE2/hFE1

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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