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2SC3841 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part # 2SC3841
Description  Silicon NPN transistor in a SOT-23 Plastic Package
PDF  6 Pages
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Manufacturer  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Direct Link  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC3841 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC3841
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
30
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector Cut-Off Current
ICBO
VCB=10V
IE=0
0.1
μA
DC Current Gain
hFE
VCE=10V
IC=5.0mA
40
100
200
Collector-emitter saturation
voltage
VCE(sat)
IC=10mA
IB=1.0mA
0.09
0.5
V
Transition Frequency
fT
VCE=10V
IE=-5.0mA
2.5
4.0
GHz
Collector output capacitance
Cob
VCB=10V
IE=0
f=1.0MHz
0.85
1.5
pF
Collector to Base Time Constant
CC·rbb’
VCE=10V
IE=-5.0mA
f=31.9MHz
4.0
10
ps
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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