BC856 datasheet(2/6 Pages) FOSHAN

2 / 6 page

BC856

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-80

Collector to Emitter Voltage

VCEO

-65

Emitter to Base Voltage

VEBO

-5.0

Collector Current - Continuous

-100

Collector Power Dissipation

350

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-30 V

IE=0

-0.015

μA

DC Current Gain

hFE

VCE=-5.0V

IC=-2.0mA

125

475

Collector to Emitter Saturation

Voltage

VCE(sat)(1) IC=-10mA

IB=-0.5mA

-0.09

-0.3

VCE(sat)(2) IC=-100mA

IB=-5.0mA

-0.25

-0.65

Base to Emitter Saturation

Voltage

VBE(sat)(1) IC=-10mA

IB=-0.5mA

-0.7

VBE(sat)(2) IC=-100mA

IB=-5.0mA

-0.9

Base to Emitter Voltage

VBE(ON)1 VCE=-5.0V

IC=-2.0mA

-0.6

-0.65

-0.75

Base to Emitter Voltage

VBE(ON)2 VCE=-5.0V

IC=-10mA

-0.82

Transition Frequency

VCE=-5.0V

IC=10mA

f=100MHz

150

MHz

Collector Output Capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

4.5

Noise Figure

VCE=-6.0V

IC=-0.1mA

Rg=2KΩ

f=1.0KHz

2.0

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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